Effect of a SiO₂ Anti-reflection Layer on the Optoelectronic Properties of Germanium Metal-Semiconductor-Metal Photodetectors

Хэвлэлийн нэр: Journal of Semiconductor Technology and Science (ISBN:1598-1657)

Зохиогч:  Х.Загарзүсэм

Хамтран зохиогч: Munkhsaikhan Zumuukhorol,Jong-Hee Kim,Kyu-Hwan Shim,Sung-Nam Lee

Хэвлүүлсэн огноо: 2017-08-27

Хуудас дугаар: 483-491

Өгүүллийн хураангуй:

The interdigitated germanium (Ge) metal- semiconductor-metal (MSM) photodetectors (PDs) with and without an SiO2 anti-reflection (AR) layer was fabricated, and the effect of SiO2 AR layer on their optoelectronic response properties were investigated in detail. The lowest reflectance of 15.6% at the wavelength of 1550 nm was obtained with a SiO2 AR layer with a thickness of 260 nm, which was in a good agreement with theoretically calculated film thickness for minimizing the reflection of Ge surface. The Ge MSM PD with 260 nm-thick SiO2 AR layer exhibited enhanced device performance with the maximum values of responsivity of 0.65 A/W, the quantum efficiency of 52.2%, and the detectivity of 2.49 × 109 cm Hz0.5W-1 under the light illumination with a wavelength of 1550 nm. Moreover, time- dependent switching analysis of Ge MSM PD with 260 nm- thick SiO2 AR layer showed highest on/off ratio with excellent stability and reproducibility. All this investigation implies that 260 nm-thick SiO2 AR layer, which is effective in the reduction in the reflection of Ge surface, has a great potential for Ge based optoelectronic devices.

Өгүүллийн төрөл: Томсон-Ройтерсийн индекстэй(IF-JCR) сэтгүүл

Өгүүллийн зэрэглэл: Гадаад

Түлхүүр үг: #anti-reflection layer #Ge #SiO2 #MSM photodetector #responsivity

Өгүүлэл нэмсэн: Х.Загарзүсэм

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