High Performance ESD/Surge Protection Capability of Bidirectional Flip Chip Transient Voltage Suppression Diodes
Хэвлэлийн нэр: Transactions on Electrical and Electronic Materials
Хамтран зохиогч: Sakhone Pharkphoumy, Zagarzusem Khurelbaatar, Valliedu Janardhanam, Chel-Jong Choi, Kyu-Hwan Shim, Daoheung, Sang-Sik Choi, Deok-Ho Cho
Хэвлүүлсэн огноо: 2016-06-25
Хуудас дугаар: pp.196-200
We have developed new electrostatic discharge (ESD) protection devices with, bidirectional flip chip transient voltage suppression. The devices differ in their epitaxial (epi) layers, which were grown by reduced pressure chemical vapor deposition (RPCVD). Their ESD properties were characterized using current-voltage (I-V), capacitance-voltage (CV) measurement, and ESD analysis, including IEC61000-4-2, surge, and transmission line pulse (TLP) methods. Two BD-FCTVS diodes consisting of either a thick (12 μm) or thin (6 μm), n-Si epi layer showed the same reverse voltage of 8 V, very small reverse current level, and symmetric I-V and C-V curves. The damage found near the corner of the metal pads indicates that the size and shape of the radius govern their failure modes. The BD-FCTVS device made with a thin n- epi layer showed better performance than that made with a thick one in terms of enhancement of the features of ESD robustness, reliability, and protection capability. Therefore, this works confirms that the optimization of device parameters in conjunction with the doping concentration and thickness of epi layers be used to achieve high-performance ESD properties.
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