Graphene/Ge Schottky Junction Based IR Photodetectors

Хэвлэлийн нэр: Trans Tech Publications

Зохиогч:  Х.Загарзүсэм

Хамтран зохиогч: Chel-Jong Choi

Хэвлүүлсэн огноо: 2018-01-10

Хуудас дугаар: 133-137

Өгүүллийн хураангуй:

Ge p-i-n photodetectors with and without graphene on active area fabricated and investigated the graphene effects on opto-electrical properties of photodetectors. The photodetectors were characterized with respect to their dark, photocurrents and responsivities in the wavelength range between 1530-1630 nm. For a 250 um-diameter device at room temperature, it was found that dark current of p-i-n photodetector with graphene were reduced significantly compared with photodetector without graphene. This improvement is attributed to the passivation of the graphene layers that leads to the efficient light detection. Therefore, it is noted that the uniform coverage of graphene onto the Ge surface plays a significant role in advancing their opto-electrical performance of photodetector

Өгүүллийн төрөл: Томсон-Ройтерсийн индекстэй(IF-JCR) сэтгүүл

Өгүүллийн зэрэглэл: Гадаад

Түлхүүр үг: #graphene #heterojunction #Germanium #p-i-n photodetector

Өгүүлэл нэмсэн: Х.Загарзүсэм

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