Optoelectrical Characterization of Infrared Photodetector Fabricated on Ge-on-Si Substrate

Хэвлэлийн нэр: Journal of Nanoscience and Nanotechnology

Зохиогч:  Х.Загарзүсэм

Хамтран зохиогч: Khurelbaatar Z, Kil YH, Kim TS, Shim KH, Hong H, Choi CJ.

Хэвлүүлсэн огноо: 2015-10-15

Хуудас дугаар: 15(10):7832-5.

Өгүүллийн хураангуй:

We report on the optoelectronic characterization of Ge p-i-n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surface roughness of epitaxial layer was estimated to be 2 x 10(18) cm(-3) and 1.2 nm, respectively. The photodetector were characterized with respect to their dark, photocurrent and responsivities in the wavelength range of 1530-1630 nm. At 1550 nm wavelength, the responsivity of 0.32 A/W was measured for a reverse bias of 1 V, corresponding to 25% external quantum efficiency, without an optimal antireflection coating. Responsivity drastically reduced from 1560 nm wavelength which could be attributed to decreased absorption of Ge at room temperature.

Өгүүллийн төрөл: Томсон-Ройтерсийн индекстэй(IF-JCR) сэтгүүл

Өгүүллийн зэрэглэл: Гадаад

Түлхүүр үг: #Epitaxy #Ge #Photodetector #Infrared #RTCVD #Si

Өгүүлэл нэмсэн: Х.Загарзүсэм

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