Optoelectrical Properties of Germanium Based Photodetectors with Graphene

Зохиогч:  Х.Загарзүсэм

Хамтран зохиогч:

Үйл явц: Бичиж хэвлүүлсэн

Бүтээлийн товч тайлбар:

The continued scaling down of devices to enhance performance to reaching its resulting in higher source injection velocity and higher drive current. For opto-electronics Ge can absorb light in the infrared region, which makes it attractive for integration of monolithic optical components with Si leading to photodetection at telecommunication wavelengths (from 1310 nm to 1550 nm). Furthermore, Ge-based optical communication circuits can be monolithically integrated with Si transistor technology. Due to these advantages currently significant technological interest in the epitaxial growth high-quality Ge layers directly on Si substrate. However, conventional epitaxial Ge growth on Si requires careful processing to minimize the impact of the dislocations caused by the lattice mismatch ( 4.2%) and large thermal expansion coefficient difference between Ge and Si. Though many approaches such as the graded SiGe buffer layer, multiple step growth, or high-temperature annealing have been developed and attempting to reduce defect formation.  

Graphene, a single sheet of two-dimensional sheet of covalently bonded hexagonal carbon atoms, has been attracting much attention due to its outstanding properties such as high intrinsic mobility, high thermal conductivity, and high optical transmittance. Moreover, the superior flexibility and abundance of carbon source at lower costs make graphene as a transparent conducting electrode, antireflection coating, surface passivation layer, and current spreading films in numerous applications such as a flexible solar cell, touch screen, light emitting diode and liquid crystal displays. 


Хэвлүүлсэн газар: Chonbuk National University, South Korea

Хэвлүүлсэн огноо: 2015/02/22

Хуудасний тоо: 198

Түлхүүр үг: #Infrared #Photodetector #Ge on Si #Graphene #Ge

Бүтээл нэмсэн:Х.Загарзүсэм

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